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Incubation Time Free CVD-TiO2 Film Preparation Using Novel Precursor of Ti-DOT

Published online by Cambridge University Press:  23 March 2011

Hirokazu Chiba ,
Ken-ichi Tada ,
Toshiki Yamamoto ,
Kohei Iwanaga ,
Atsushi Maniwa ,
Tadahiro Yotsuya ,
Noriaki Oshima  and
Hiroshi Funakubo
Hirokazu Chiba
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan
Ken-ichi Tada
Affiliation:
Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Toshiki Yamamoto
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Kohei Iwanaga
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Atsushi Maniwa
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan
Tadahiro Yotsuya
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Noriaki Oshima
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa, 226-8502, Japan
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Abstract

Titanium oxide thin films were deposited at 250 – 400 °C on amorphous SiO2 prepared on n-type Si substrates by chemical vapor deposition (CVD) using a novel precursor, ethene-1,2-diylbis(tert-butylaminido)diisopropoxotitanium [Ti[N(tBu)C=CN(tBu)](OiPr)2 , Ti-DOT], with oxygen gas as an oxidant. Deposition characteristics of thin films were compared with those using titanium tetraisopropoxide [Ti(OiPr)4, TTIP]. As a result, the deposition amount of TiO2 thin films using Ti-DOT was larger than that of TTIP because of the shorter incubation time in the case of Ti-DOT. Smaller surface roughness was observed for the films using Ti-DOT. In addition, a good conformability was obtained on amorphous SiO2 hole prepared on n-type Si substrate substrate with aspect ratio of 5.

Keywords

chemical vapor deposition (CVD) (deposition)Tithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g06-38
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Durand, H. A., Brimaud, J. H., Hellman, O., Shibata, H., Sakuragi, S., Makita, Y., Gesbert, D., and Meyrueis, P., Appl. Surf. Sci., 86, 122 (1995).Google Scholar
2. Inoue, T., Fujishima, A., Konishi, S., and Honda, K., Nature (London), 277, 637 (1979).Google Scholar
3. Keshmiri, M. and Troczynski, T., J. Non-Cryst. Solids, 324, 289 (2003).Google Scholar
4. Watanabe, T., Hoffmann-Eifert, S., Yang, L., Rüdiger, A., Kügeler, C., Hwang, C. S. and Waser, R., J. Electrochem. Soc., 154, G134 (2007).Google Scholar
5. Fitzgibbons, E. T., Sladek, K. J., and Hartwig, W. H., J. Electrochem. Soc., 119, 735 (1972).Google Scholar
6. Fictorie, C. P., Evans, J. F., and Gladfelter, W. L., J. Va. Sci. Technol A, 12, 1108 (1994).Google Scholar
7. Black, K., Jones, A. C., Bacsa, J., Chalker, P. R., Marshall, P. A., Davies, H. O., Heys, P. N., O’Brien, P., Afzaal, M., Raftery, J., and Critchlow, G. W., Chem. Vap. Depo., 16, 93 (2010).Google Scholar
8. Piszczek, P., Polyhedron, 26, 93 (2007).Google Scholar
9. Haaf, M.; Schmiedl, A.; Schmedake, T. A.; Powell, D. R.; Millevolte, A. J.; Denk, M.; West, R. J. Am. Chem. Soc., 120, 12714 (1998).Google Scholar