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Indium in silicon: interactions with native defects and with C impurities

Published online by Cambridge University Press:  17 March 2011

P. Alippi ,
A. La Magna ,
S. Scalese  and
V. Privitera
P. Alippi
Affiliation:
CNR-IMM, Sezione Catania, Stradale Primosole 50, 95121 Catania, (Italy)
A. La Magna
Affiliation:
CNR-IMM, Sezione Catania, Stradale Primosole 50, 95121 Catania, (Italy)
S. Scalese
Affiliation:
CNR-IMM, Sezione Catania, Stradale Primosole 50, 95121 Catania, (Italy)
V. Privitera
Affiliation:
CNR-IMM, Sezione Catania, Stradale Primosole 50, 95121 Catania, (Italy)
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Abstract

Equilibrium geometries and formation energies of neutral and charged In complexes with silicon native defects (vacancy (V) and self-interstitials (I)) and with C impurities are investigated within density functional theory, using the Vienna Ab-initio Simulation Package. We determine formation energies and ionization levels of different complexes and discuss the contribution of I and V to indium diffusion. We also identify the In-C defect responsible for the increased electrical activation in In+C-doped silicon samples. The ab initio energetics is then implemented in a continuum diffusion code in order to simulate the diffusion of as-implanted In profiles under different thermal treatments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C6.3
Copyright
Copyright © Materials Research Society 2004

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References

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