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Influence of Interfacial Delamination on Channel Cracking of Brittle Thin Films

Published online by Cambridge University Press:  01 February 2011

Yaoyu Pang  and
Rui Huang
Yaoyu Pang
Affiliation:
steven_pang@mail.utexas.edu, University of Texas at Austin, Department of Aerospace Engineering and Engineering Mechanics, 1 University Station, C0600, Austin TX 78712, United States
Rui Huang
Affiliation:
ruihuang@mail.utexas.edu, University of Texas at Austin, Department of Aerospace Engineering and Engineering Mechanics, 1 University Station, C0600, Austin, TX, 78712, United States
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Abstract

Channeling cracks in low-k dielectrics have been observed to be a key reliability issue for advanced interconnects. The constraint effect of surrounding materials including stacked buffer layers has been studied. This paper analyzes the effect of interfacial delamination on the fracture condition of brittle thin films on elastic substrates. It is found that stable delamination along with the growth of a channel crack is possible only for a specific range of elastic mismatch and interface toughness. An effective energy release rate is defined to account for the influence of interfacial delamination on both the driving force and the fracture resistance, which can be significantly higher than the case assuming no delamination.

Keywords

adhesionfracturethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B06-04
Copyright
Copyright © Materials Research Society 2007

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References

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