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Influence of methane concentration on the electric transport properties in heavily boron-doped nanocrystalline CVD diamond films

Published online by Cambridge University Press:  09 March 2011

Stoffel D. Janssens ,
Paulius Pobedinskas ,
Vladimíra Petráková ,
Miloš Nesládek ,
Ken Haenen  and
Patrick Wagner
Stoffel D. Janssens
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium
Paulius Pobedinskas
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium
Vladimíra Petráková
Affiliation:
Academy of Sciences of the Czech Republic, v.v.i., Institute of Physics, Prague, Czech Republic
Miloš Nesládek
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium IMEC vzw, Division IMOMEC, Diepenbeek, Belgium
Ken Haenen
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium IMEC vzw, Division IMOMEC, Diepenbeek, Belgium
Patrick Wagner
Affiliation:
Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium IMEC vzw, Division IMOMEC, Diepenbeek, Belgium
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Abstract

A study is presented on the morphology and electric properties of heavily boron-doped nanocrystalline diamond (B:NCD) thin films (≈150snm) grown with two different C/H-ratios (1% and 5%) and a fixed 5000sppm B/C-ratio in gas phase on fused silica substrates. AFM measurements confirm that a higher C/H-ratio leads to smaller grains and more grain boundaries. Electric transport measurements reveal a higher resistivity and a lower mobility as function of the C/H-ratio for all temperatures measured. The resistivity of the 1% sample is almost not temperature dependent while the 5% sample is much more temperature dependent. The electric transport properties of the grain boundaries, more present in the 5% sample, can be responsible for the difference in transport properties of both samples. The active boron concentration, calculated from the electric transport measurements, is remarkably higher for the 5% sample which indicates there is more boron incorporation for higher C/H-ratios. Although both samples are disordered metals, the 1% sample with the least grain boundaries tends more to the behavior of a highly doped single crystalline diamond film, which behaves like a real metal when heavily boron-doped.

Keywords

diamondnanoscaleelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1282: Symposium A – Diamond Electronics and Bioelectronics—Fundamentals to Applications IV , 2011 , mrsf10-1282-a15-04
Copyright
Copyright © Materials Research Society 2011

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References

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