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Influence of Platinum Bottom Electrodes on the Piezoelectric Performance of PZT Thin Films Hot Sputtered in a High Volume Production Tool

Published online by Cambridge University Press:  29 February 2012

Dirk Kaden ,
Hans-Joachim Quenzer ,
Martin Kratzer ,
Lorenzo Castaldi ,
Bernhard Wagner ,
Bernd Heinz  and
Robert Mamazza
Dirk Kaden
Affiliation:
Fraunhofer Institute for Silicon Technology (ISiT), 25524 Itzehoe, Germany.
Hans-Joachim Quenzer
Affiliation:
Fraunhofer Institute for Silicon Technology (ISiT), 25524 Itzehoe, Germany.
Martin Kratzer
Affiliation:
OC Oerlikon Balzers AG, 9496 Balzers, Liechtenstein.
Lorenzo Castaldi
Affiliation:
OC Oerlikon Balzers AG, 9496 Balzers, Liechtenstein.
Bernhard Wagner
Affiliation:
Fraunhofer Institute for Silicon Technology (ISiT), 25524 Itzehoe, Germany.
Bernd Heinz
Affiliation:
OC Oerlikon Balzers AG, 9496 Balzers, Liechtenstein.
Robert Mamazza
Affiliation:
OC Oerlikon Balzers AG, 9496 Balzers, Liechtenstein.
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Abstract

In this work high quality ferroelectric PZT films have been prepared in-situ by hot RF magnetron sputtering. 200 mm wafer were coated with PZT films of 1 μm and 2 μm thickness at sputter rates of 45 nm/min in a high volume production sputtering tool. The films were grown on oxidized Si substrates prepared either with sputtered Ti/TiO2/Pt, sputtered Ti/TiO2/Pt/TiO2 or evaporated Ti/Pt bottom electrodes at substrate holder temperatures in the range from 550 °C to 700 °C. At these temperatures, the material nucleates in the requisite piezoelectric perovskite phase without need of an additional post annealing treatment.

The films were investigated with respect to their chemical composition and their crystallographic, piezoelectric and dielectric properties. At an intermediate chuck temperature of 600 °C the PZT thin films were characterized by a minimum volume fraction of secondary nonpiezoelectric phases. A Zr/(Zr+Ti) ratio of 0.53 has been achieved matching the morphotropic phase boundary. By improving the deposition process and poling procedure, a notable high e31,f coefficient of -17.3 C/m2 has been obtained. The corresponding longitudinal piezoelectric constant was determined to have an effective longitudinal piezoelectric coefficient d33,f of 160 pm/V.

Keywords

sputteringferroelectricmicroelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1397: Symposium P – Ferroelectric and Multiferroic Materials , 2012 , mrsf11-1397-p13-31
Copyright
Copyright © Materials Research Society 2012

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References

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