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Influence of the Ferroelectric Phase Transition on the Photoelectrical Properties of the P-N Junctions

Published online by Cambridge University Press:  15 February 2011

Anatol T. Lupu  and
Svetlana P. Grishechkina
Anatol T. Lupu
Affiliation:
Technical University of Moldova, 168 Stefan eel Mare, Chisinau, MOLDOVA, 277012
Svetlana P. Grishechkina
Affiliation:
Lebedev Physics Institute, Russian Academy of Sciences, 53 Leninsky av, Moscow, RUSSIA, B312
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Abstract

Photoelectrical properties of the p-n junctions on the base of Pb1−xGexTe were investigated. A number of anomalous phenomena below Tc such as: the change of the photovoltage sign, low frequency maximum in the temperature dependence of the junction capacitance and feature near the edge of the spectral dependence were observed.

To explain the obtained results a model considering screening of spontaneous polarization outside the junction was proposed. This work gave for the first time experimental evidence concerning the model of polarization switching in ferroelectric with p-n junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 215
Copyright
Copyright © Materials Research Society 1995

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References

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