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The Influence of the Substrate Temperature on the Recombination Processes in a-Si:H

Published online by Cambridge University Press:  15 February 2011

Y. Lubianiker ,
I. Balberg ,
L. Fonseca  and
S. Z. Weisz
Y. Lubianiker
Affiliation:
Racah Institute of Physics, the Hebrew University, Jerusalem 91904, Israel
I. Balberg
Affiliation:
Racah Institute of Physics, the Hebrew University, Jerusalem 91904, Israel
L. Fonseca
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
S. Z. Weisz
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
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Abstract

We have studied the four phototransport properties as a function of temperature in undoped a-Si:H films deposited with different substrate temperatures in the range 150 – 225°C. The analysis of the results indicates how Ts determines the densities of the various defects. The general trend of decrease of both the density of dangling bonds and the Urbach energy is in agreement with the weak bond breaking model. However, we conclude that a slight modification of this model is required.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 209
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Stutamann, M., Phil. Mag. B 60, 531 (1989).Google Scholar
[2] Moreli, G., Katiyar, R.S., Weisz, S.Z., Jia, H., Shinar, J. and Balberg, I., J. Appl. Phys. 78, 5120 (1995).Google Scholar
[3] Manan, A.H., Nelson, B.P., Solomon, S. and Crandall, R.S., Mat. Res. Soc. Symp. Proc. 219, 673 (1991).Google Scholar
[4] Farias, M.H., Roche, A., Weisz, S.Z., Jia, H., Shinar, J., Lubianiker, Y. and Balberg, I., Mat. Res. Soc. Symp. Proc. 336, 425 (1994).Google Scholar
[5] For a review see, Balberg, I., Mat. Res. Soc. Symp. Proc. 258, 693 (1992).Google Scholar
[6] Tran, M.Q., Phil. Mag. B 72, 35 (1995).Google Scholar
[7] Wang, F. and Schwarz, R., Phys. Rev. B 52, 14586 (1995).Google Scholar
[8] Lubianiker, Y., Naidis, R., Balberg, I., Fonseca, L. and Weisz, S.Z., Mat. Res. Soc. Symp. Proc. 420, 777 (1996).Google Scholar
[9] Balberg, I., J. Appl. Phys. 75, 914 (1994).Google Scholar
[10] Ritter, D., Zeldov, E. and Weiser, K., Appl. Phys. Lett. 49, 791 (1986).Google Scholar
[11] Fritzsche, H., Tran, M.Q., Yoon, B.-G. and Chi, D.-Z., J. Non-Cryst. Solids 137–138, 467 (1991).Google Scholar
[12] Cody, G.D., Tiedje, T., Abeles, B., Brooks, B. and Goldstein, Y., Phys. Rev. Lett. 47, 1480 (1981).Google Scholar