Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-18T12:19:14.807Z Has data issue: false hasContentIssue false
  • English
  • Français

InGaAs-InP Quantum Wire Stark Effect Modulators: Effect of Wire Width in the Optimization of Changes in Excitonic Absorption and Index of Refraction

Published online by Cambridge University Press:  21 March 2011

M. Xu ,
W. Huang  and
F. Jain
M. Xu
Affiliation:
Microsoft Corp., 15400 NE 13th Pl, Bellevue, WA 98007
W. Huang
Affiliation:
Electrical Engineering and Computer Science Department United State Military Academy, West Point, NY 10996
F. Jain
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Connecticut, Storrs, CT 06269-2157
Get access

Abstract

Quantum wire/dot modulators offer superior performance over their quantum well counterpart due to enhanced excitonic binding energy. This paper presents simulations on InGaAs-InP quantum wire Stark effect optical modulators showing a novel trend. While the excitonic binding energies and absorption coefficients increase as the width of the wire is decreased, the refractive index change Δn is maximized at a wire width depending on the magnitude of the applied electric field. For example, Δn is maximized at a width of about 100Å for an external electric field of 120kV/cm in an InGaAs quantum wire. This behavior is explained by considering the opposing effects of the wire width on binding energy and changes in the electron-hole overlap function in the presence of an external electric field. Practical InGaAs-InP modulators using V-groove structures are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G6.9
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Miller, D. A. B. and Chemla, D.S., Damen, T. C., Gossard, A.C., Wiegmann, W., Wood, T. H., and Burrus, C. A., Phys. Rev. B., 32, pp. 1043–1060, July 15, 1985.Google Scholar
2. Cheung, S., Jain, F., Sacks, R., Cullen, D., Ball, G., and Grudkowski, T., Appl. Phys. Lett., 63, July 19, 1993.Google Scholar
3. Huang, W. and Jain, F., J. Appl. Phys., 81, pp. 6781–85, May 1997.Google Scholar
4. Kapon, E., Tamargo, M.C., and Hwang, D.M., Appl. Phys. Lett. 50, p.347, 1987.Google Scholar
5. Arakawa, T., kato, Y., Sogawa, F., and Arakawa, Y., Appl. Phys. Lett. 70, pp. 646–648, 1997.Google Scholar
6. Ming, X., Thesis, M.S., Electrical Engineering Department, Bucknell University, April 24, 2000.Google Scholar
7. Thirstrup, C., IEEE J. Quantum Electronics, QE–31, p988–996, 1995.Google Scholar