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Injection-Related Damage in Metal-Oxide-Silicon Tunnel Diodes

Published online by Cambridge University Press:  22 February 2011

K. R. Farmer ,
P. Lundgren ,
M. O. Andersson  and
O. Engstrom
K. R. Farmer
Affiliation:
New Jersey Institute of Technology, Department of Physics, Newark, NJ 07102
P. Lundgren
Affiliation:
Chalmers University of Technology, Department of Solid State Electronics, S-412 96 Gothenburg, Sweden.
M. O. Andersson
Affiliation:
Chalmers University of Technology, Department of Solid State Electronics, S-412 96 Gothenburg, Sweden.
O. Engstrom
Affiliation:
Chalmers University of Technology, Department of Solid State Electronics, S-412 96 Gothenburg, Sweden.
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Abstract

Current-voltage and conductance-voltage characterization is used to study high bias related “positive charge” in MOS tunnel diodes fabricated on p-type substrates. This charge effect appears to be associated with interface state levels that are located both throughout the band gap, and at a well-defined energy level roughly 0.3 eV above the silicon valence band edge. The well-defined state apparently acts as a tunnelingcenter communicating with the gate electrode and the silicon valence band. In addition, the first observation of high bias related charge is reported for tunnel diodes built on n-type substrates. This charge has positive character at low bias levels, transforming to net negative charge at high gate voltages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 229
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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