Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T12:24:11.525Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Line Ambient Impurity Measurement on a Rapid Thermal Process Chamber by Atmospheric Pressure Ionisation Mass Spectrometry

Published online by Cambridge University Press:  10 February 2011

Eiichi Kondoh ,
Guy Vereecke ,
Marc M. Heyns ,
Karen Maex ,
Thomas Gutt  and
Zsolt Nwnyeil
Eiichi Kondoh
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Guy Vereecke
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Marc M. Heyns
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Karen Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium. INSYS, Katholieke Universiteit Leuven, Belgium
Thomas Gutt
Affiliation:
Steag-AST elektronik GmbH, DaimlerstraBe 10, 89160 Dornstadt, Germany.
Zsolt Nwnyeil
Affiliation:
Steag-AST elektronik GmbH, DaimlerstraBe 10, 89160 Dornstadt, Germany.
Get access

Abstract

Gaseous impurities in the chamber of a SHS2800ε rapid thermal processor were quantitatively measured by using atmospheric pressure ionisation mass spectrometry (APIMS). APIMS is a very sensitive technique to detect trace impurities in a bulk (1 atm) gas. A wide dynamic range (0.1 ppb - 10 ppm) measurement was successfully performed, which allowed in-situ monitoring of impurities during RTP. This work reports the fundamental behaviour of ambient impurities originating from different sources. The sources discussed in this paper are threefold: system background, wafer loading, and the wafer itself. Ambient management requires a better understanding of the independent contribution of each source on processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 51
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wang, Q.F., Lauwers, A., Jonckx, F., de Potter, M., Chen, C.-C., and Maex, K., Mat. Res. Soc. Symp. Proc., 402, 221 (1996).Google Scholar
2. Haider, A., McAndrew, J., and Inman, R., Electrochemical Soc. Proc., 97–22, 484–495 (1997).Google Scholar
3. Siefering, K., Whitlock, W., and Berger, H., J. Electrochem. Soc., 140, 1165 (1993).Google Scholar
4. Vereecke, G., Kondoh, E., Richardson, P., Maex, K., Heyns, M.M., and Ndnyei, Z., in the Proceedings of the 44”’ Annual Technical Meeting Institute Environmental Science and Technology.Google Scholar
5. Verma, N. K., Haider, A. M., and Shadman, S., J. Electrochem. Soc., 140, 1459 (1993).Google Scholar