Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T16:12:18.561Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Ellipsometry and Light Scattering Studies of Substrate Cleaning and Initial Layer Deposition in Low Temperature CVD of Crystalline Si

Published online by Cambridge University Press:  25 February 2011

C. Pickering ,
D. J. Robbins ,
I. M. Young ,
J. L. Glasper ,
M. Johnson  and
R. Jones
C. Pickering
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs, UK
D. J. Robbins
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs, UK
I. M. Young
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs, UK
J. L. Glasper
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs, UK
M. Johnson
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs, UK
R. Jones
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs, UK
Get access

Abstract

The first in-situ observations of initial stages of growth during Si vapour-phase homoepitaxy are reported, using the simultaneous measurement of dual-wavelength ellipsometry (364/488nm) and diffuse light scattering (488nm). Effective medium modelling shows that initial growth is nonuniform with pits present in the first 50–200Å of growth which rapidly fill in as growth proceeds. The sizes of the ellipsometric and scattering discontinuities are dependent on the extent of pre-growth roughening associated with oxide removal and finite wavelength effects become important for growth on roughened substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 173
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Robbins, D. J. et al, J Crystal Growth 81, 421 (1987).Google Scholar
2. Hottier, F. and Cadoret, R., J Crystal Growth 56, 304 (1982).Google Scholar
3. Collins, R. W., Appl Phys Lett 48, 843 (1986).CrossRefGoogle Scholar
4. Kumar, S., Drevillon, B. and Godet, C, J Appl Phys 60, 1542 (1986).CrossRefGoogle Scholar
5. Robbins, D. J. and Young, I. M., Appl Phys Lett (in press) (1987).Google Scholar
6. Aspnes, D. E. and Studna, A. A., Appl Optics 14, 220 (1975).Google Scholar
7. Kern, W., Semicond International (April) 1984, 94.Google Scholar
8. Jellison, G. E. and Modine, r. A., Phys Rev B 27, 7466 (1983).Google Scholar
9. Aspnes, D. E. and Theeten, J. B., J Electrochem Soc 127, 1359 (1980).Google Scholar
10. Hardeman, R. W., Robbins, D. J., Gasson, D. B. and Daw, A. Electrochem Soc Proc 85–7, 16 (1985).Google Scholar
11. Aspnes, D. E., Proc SPIE 276, 188 (1981).Google Scholar
12. Egan, W. G. and Aspnes, D. E., Phys Rev B 26, 5313 (1982).CrossRefGoogle Scholar
13. Aspnes, D. E., Phys Rev B 25, 1358 (1982).Google Scholar