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In-Situ Ellipsometry Study of Amorphous Silicon Interfaces

Published online by Cambridge University Press:  26 February 2011

A. M. Antoine ,
B. Drevillon  and
C. Godet
A. M. Antoine
Affiliation:
Equipe Synthese de Couches Minces pour l'Energétique (ER 258), LPNHE, Ecole Polytechnique. 9112” - PALAISEAU -, FRANCE.
B. Drevillon
Affiliation:
Equipe Synthese de Couches Minces pour l'Energétique (ER 258), LPNHE, Ecole Polytechnique. 9112” - PALAISEAU -, FRANCE.
C. Godet
Affiliation:
Also at : Laboratoire de Physico-Chimie des Rayonnements (UA75), Université Paris-Sud, 91405 - ORSAY (France).
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Abstract

A systematic comparison of the growth of plasma deposited amorphous silicon a-Si:H on chromium and glass substrates using real-time ellipsometry is presented. In order to compare the optical properties of the substrates before and after a-Si:H deposition, the amorphous films are removed by H-etching. Although the early stage of the growth of a-Si:H on chromium substrates is compatible with a nucleation mechanism, chromium suicides are probably produced at the film substrate interface. A faster chemical reaction between a-Si:H and the glass substrate is observed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 381
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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