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In-Situ Mass Spectroscopy of ECR Silane Plasmas for Amorphous and Microcrystalline Silicon Growth

Published online by Cambridge University Press:  17 March 2011

Young J. Song ,
Elena Guliants ,
Hak-Gyu Lee  and
Wayne A. Anderson
Young J. Song
Affiliation:
State University of New York at Buffalo, Department of Electrical Engineering, Amherst, NY 14260, U.S.A.
Elena Guliants
Affiliation:
State University of New York at Buffalo, Department of Electrical Engineering, Amherst, NY 14260, U.S.A.
Hak-Gyu Lee
Affiliation:
State University of New York at Buffalo, Department of Electrical Engineering, Amherst, NY 14260, U.S.A.
Wayne A. Anderson
Affiliation:
State University of New York at Buffalo, Department of Electrical Engineering, Amherst, NY 14260, U.S.A.
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Abstract

ECR silane plasmas for the deposition of a-Si:H and μc-Si films were investigated by in-situ mass spectroscopy (MS) using a quadrupole residual gas analyzer. The results showed that the intensities of ionic and neutral species (H, H2, He, Ar, Si and SiHx) in the 2 % SiH4/He plasma are strongly dependent on the deposition conditions such as chamber pressure, input power and hydrogen dilution. In all cases, the prevalence of Si ions was observed over SiH, SiH2 and SiH3 ions, suggesting a high decomposition rate of the silane in the plasma. In particular, the population of atomic hydrogen in the plasma seems to play a key role in the properties of both a-Si:H and μc-Si films. For example, the increased intensity of atomic hydrogen, compared to that of molecular hydrogen, resulted in the better quality a-Si:H film, showing a higher photo and dark conductivity ratio of ~105. The intensity of the hydrogen species was especially sensitive to the chamber pressure. The correlation between MS spectra and film properties is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A5.4
Copyright
Copyright © Materials Research Society 2000

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References

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