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In-Situ Pretreatment Approach for Surface Deterioration Alleviation Amidst Thermal Desorption of Si(100)

Published online by Cambridge University Press:  01 February 2011

A.F. Pun ,
X. Wang ,
J.B. Meeks ,
S.M Durbin  and
J.P. Zheng
A.F. Pun
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
X. Wang
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
J.B. Meeks
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
S.M Durbin
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, NEW ZEALAND
J.P. Zheng
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
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Abstract

Within this article, a novel in-situ method is proposed as a modification of thermal desorption utilizing pretreatment which can be applied to systems subject to material deposition, substrate heating, and creation of non-oxidizing environments (vacuum or inert atmosphere). Following the theoretical development of this proposed method, involving the fue ling of the oxide-reduction reaction with segregated sacrificial material, the method is demonstrated experimentally on Si (100) wafers utilizing ex-situ atomic force microscopy for resulting surface topography analysis and in-situreflective high-energy electron diffraction for crystalline information during the modified thermal desorption progression.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J2.3
Copyright
Copyright © Materials Research Society 2005

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