Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-01T21:28:36.491Z Has data issue: false hasContentIssue false

In-Situ Tem Study of Crystallisation of Amorphous SbOx Films

Published online by Cambridge University Press:  15 February 2011

R. Nayak
Affiliation:
Department of Materials, University of Oxford, Parks Road OX1 3PH, UK
A. K. Petford-Long
Affiliation:
Department of Materials, University of Oxford, Parks Road OX1 3PH, UK
R. C. Doole
Affiliation:
Department of Materials, University of Oxford, Parks Road OX1 3PH, UK
C. N. Afonso
Affiliation:
Instituto de Optica, CSIC, Serrano 121, 28006, Madrid, Spain
Get access

Abstract

Amorphous d.c. sputtered SbOx films (0.19< x<2.0) have been found to be fast crystallising materials sensitive to nano- and pico-second laser pulses, and have potential applications as optical data-storage media. They were crystallised in-situ in a JEOL 4000EX TEM, and the crystallisation recorded onto video tape. The crystallisation of the SbO0.37 films occurred by random nucleation followed by growth until coalescence. In contrast the crystallisation of the SbO0.533 films occurred by surface crystallisation across the whole film followed by bulk crystallisation through the film, during which contrast in the TEM increased steadily. Analysing the video frames in an image processing package enabled kinetic parameters such as transformation index and activation energy to be extracted. High resolution transmission electron microscopy showed the crystalline phase to contain nano-crystallites approximately 10 nm in size in a less-ordered matrix.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ovshinsky, S. in Physical Properties of Amorphous Materials, edited by Adler, D., Schwartz, B. B. and Steele, M. C., (Plenum Press, New York, 1985), p. 105.Google Scholar
2. Ohta, T., Takenaga, M., Akahira, N., Yamashita, T., J. App. Phys. 53(12), 8497 (1982).Google Scholar
3. Afonso, C. N., Morilla, M. C., Solis, J., Rizvi, N. H., Ollacarizqueta, M. A., Catalina, F., Mat. Sci. Eng. A173, 343 (1993).Google Scholar
4. Sande, J. C. G. de, Vega, F., Afonso, C. N., Ortega, C., Siejka, J., Thin Solid Films 249, 195 (1994).Google Scholar
5. Petford-Long, A. K., Doole, R. C., Afonso, C. N., Solis, J., J.Appl.Phys. 77(2), 1, 1995 Google Scholar
6. Altuzar, P., Valenzuela, R., Mat. Lett. 11(3,4), 101 (1991).Google Scholar