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Interaction of Atomic Hydrogen with the Surface of Cu-llII-V12 Chalcopyrite Semiconductors-A Method for Controlled Stoichiometry Variation

Published online by Cambridge University Press:  10 February 2011

Gerd Lippold ,
Karsten Otte ,
Hermann Schlemm  and
Wolfgang Grill
Gerd Lippold
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Linnestr. 5, D-04103 Leipzig, Germany, lippold@physik.uni-leipzig.de
Karsten Otte
Affiliation:
Institut für Oberflächenmodifizierung e.V. Leipzig, Permoserstr. 15, D-04303 Leipzig, Germany
Hermann Schlemm
Affiliation:
Institut für Oberflächenmodifizierung e.V. Leipzig, Permoserstr. 15, D-04303 Leipzig, Germany
Wolfgang Grill
Affiliation:
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Linnestr. 5, D-04103 Leipzig, Germany, lippold@physik.uni-leipzig.de
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Abstract

To introduce atomic hydrogen into Cu-chalcopyrite samples, low energy broad beam ion implantation into heated targets was used. In addition to the expected hydrogen diffusion into the sample from the implanted thin surface layer, another hydrogen-related effect was observed. As demonstrated for single crystalline CuInSe2, at target temperatures above 150°C a surface layer becomes In-rich. Two phases, the CuInSe2 α-phase and a In-rich phase similar to the reported ordered vacancy compounds (β-phase) coexist, as detected by Raman spectroscopy. The depth profile and the thermal stability of this hydrogen-related compositional variation are investigated. Based on the results we discuss a model of this effect, involving a copper in-diffusion, caused by the hydrogenation due to filling of Cu vacancies and possible substitution of Cu by H. The observed β-phase-like compound is unstable against annealing above 180°C, but can be restored in a thermal cycling process. Annealing for 1.5 h at 400°C removes it completely and restores the asgrown CuInSe2 surface. A decrease of the hydrogen concentration in the surface layer due to redistribution and out-diffusion, followed by the recovery of the Cu content, might be responsible for this behaviour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 269
Copyright
Copyright © Materials Research Society 1998

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References

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