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Interaction of Copper With Single Crystal Sapphire

Published online by Cambridge University Press:  28 February 2011

A. G. Schrott ,
R. D. Thompson  and
K. N. Tu
A. G. Schrott
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
R. D. Thompson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
K. N. Tu
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

The effect of small coverages of Cu evaporated in ultra-high vacuum (UHV) on A12O3 (0001) surfaces has been investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). These surfaces were cleaned either by annealing at 1000°C in O2 or by Ar sputtering. They differ both in their initial state and their interaction with Cu. The XPS spectra from as-deposited Cu on sputtered samples exhibit small shifts in the energy location of the various peaks as compared to those from a Cu standard. Annealing the Cu/sputtered A12O3 structure at 500°C produces a shoulder on the Cu 3d peak as well as a new Cu (L3 M4.5 M4.5) Auger feature. Neither of these effects are observed after similar treatment of the Cu/annealed A12O3 structure. An influence of this different bonding situation on the Cu-sapphire interfacial energy is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 331
Copyright
Copyright © Materials Research Society 1986

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