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Interaction of Deuterium with the Simox Oxide

Published online by Cambridge University Press:  10 February 2011

L. Zimmerman ,
A. Riveral ,
J. M. M. De Nijs  and
A. Van Veen
L. Zimmerman
Affiliation:
'DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
A. Riveral
Affiliation:
'DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
J. M. M. De Nijs
Affiliation:
'DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
A. Van Veen
Affiliation:
2IRI, Delft University of Technology, P.O. Box 5042, 2600AG Delft Netherlands
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Abstract

The interaction of deuterium with silicon-implanted-with-oxygen (SIMOX) was studied for samples with and without silicon top layer using thermal desorption measurements. Deuterium is incorporated in the buried oxide by disruption of the Si-O bridging bonds. The data reveal that the top layer reduces the uptake at 1073K. Furthermore, it retards release; a moderate (≈125K) and a high-temperature (≈1400K) retention were observed. It is proposed that release is accompanied by the reconstruction of the Si-O bonds and that the bare oxide surface constitutes an abundant source for defects thus enhancing the generation and elimination of Si-O bridging bond defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 331
Copyright
Copyright © Materials Research Society 1998

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References

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