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Interdiffusion in Exchange Biased NiFe/IrMn/CoFe Electrode in Magnetic Tunnel Junctions

Published online by Cambridge University Press:  17 March 2011

Jay H. Lee ,
Hee D. Jeong ,
Il C. Rho ,
Chong S. Yoon  and
Chang K. Kim
Jay H. Lee
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
Hee D. Jeong
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
Il C. Rho
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
Chong S. Yoon
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
Chang K. Kim
Affiliation:
Hanyang University, Dept. of Materials Science and Engineering, Seoul, Korea
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Abstract

Extent of Mn diffusion to the plasma-oxidized AlOx tunnel barrier of magnetic tunnel junction was examined using Auger Electron Spectroscopy (AES) and X-Ray Photoelectron Spectroscopy (XPS). A magnetic film stack consisting of Ta/AlOx/CoFe/IrMn/NiFe/Ta was deposited with the AlOx layer treated under different plasma oxidation durations. AES depth profiles showed that Mn diffusion to the AlOx/CoFe interface increased with increasing oxidation after annealing at 300°C. XPS analysis indicated that Mn found at the CoFe/AlOx interface in the over-oxidized electrode was in the form of MnO2. Our research suggests that Mn diffusion was accelerated by preferential oxidation of Mn at the CoFe/AlOx interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 690: Symposium F – Spintronics , 2001 , F3.9
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Parkin, S.S.P., Roche, K.P., Samant, M.G., Rice, P.M., Beyers, R.B., Scheuerlein, R.E., O'Sullivan, E.J., Brown, S.L., Bucchigano, J., Abraham, D.W., Lu, Yu, Rocks, M., Trouilloud, P.L., Wanner, R.A., Gallagher, W.J., J. Appl. Phys. 85(8), 5828 (1999).Google Scholar
2. Moodera, J.S., Nowak, J., Veerdonk, J.M.Van De, Phys. Rev. Lett. 80(13), 2941 (1998).Google Scholar
3. Sousa, R.C., Sun, J.J., Soares, V., Freitas, P.P., Kling, A., Silva, M.F. da, Soares, J.C., J. Appl. Phys. Lett. 85(8), 5258 (1999).Google Scholar
4. Sousa, R.C., Freitas, P.P., Chu, V., IEEE Trans. Magn. 35(5), 2832 (1999).Google Scholar
5. Daughton, J. M., J. Appl. Phys. 81(8), 3758 (1997).Google Scholar
6. Kikuchi, H., Sato, M., Kobayashi, K., J. Appl. Phys. 87, 6055 (2000).Google Scholar
7. Cardoso, S., Freitas, P. P., Jesus, C. de, Soares, J. C., J. Appl. Phys. 87, 6058 (2000).Google Scholar
8. Cardoso, S., Freitas, P. P., Jesus, C. de, Wei, P., Soares, J. C., Appl. Phys. Lett. 76(5), 610 (1999).Google Scholar
9. Zhang, Zongzai, Cardoso, S., Freitas, P. P., Battle, X., Wei, P., Barraas, N., and Soares, J. C., J. of Appl. Phys. 89(11), 6665 (2001)Google Scholar
10. Cardoso, S., Freitas, P. P., Zhang, Z. G., Wei, P., Barradas, N., and Soares, J. C., J. of Appl. Phys. 89(11), 6650 (2001)Google Scholar
11. Sato, Masashige and Kobayashi, Kazuo, IEEE Trans. Mag. 33(5), 3553 (1997)Google Scholar
12. Parkin, S. S. P., Moon, K-S., Pettit, K. E., Smith, David J., Dunin-Borkowski, R. E., and McCartney, M. R., Appl. Phys. Lett. 75(4), 543 (1999)Google Scholar
13. Sato, M., Kikuchi, H., Kobayashi, K., J. of Appl. Phys. 83(11), 6691 (1998)Google Scholar
14. Tehrani, S., Slaughter, J. M., Chen, E., Durlan, M., Shi, J., and DeHerrera, M., IEEE Trans. Mag. 35(5), 2814 (1999)Google Scholar
15. Lee, J. H., Jeong, H. D., Kyung, H., Yoon, C. S., Kim, C. K., Park, B. G., Lee, T. D., J. of Appl. Phys, (to be published 2002)Google Scholar
16. Saito, Y., Amano, M., Nakajima, K., Takahishi, S., Sagoi, M., J. Magn. Magn. Mater. 223, 293 (2001).Google Scholar
17. Lee, J. H., Jeong, H. D., Yoon, C. S., Kim, C. K., Park, B. G., Lee, T. D., J. Appl. Phys. (to be published 2001).Google Scholar
18. The Oxide Handbook, 2nd ed., Samsonov, G. V., Editor, (IFI/Plenum, New York, 1982) p45 Google Scholar
19. Baunack, S., Brückner, W., Mikrochim. Acta. 133, 17 (2000).Google Scholar
20. Kupier, A. E. T., Gillies, M. F., Kottler, V., Hooft, G. W. 't, Berkum, J. G. M. van, Marel, C. Van der, Tamminga, Y., Snijders, J. H. M., J. Appl. Phys. 89(3), 1965 (2001).Google Scholar