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Interface Effects with Ga0.47In0.53As Layers on InP Substrates Prepared by Organometallic Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

J. S. Whiteley  and
S. K. Ghandhi
J. S. Whiteley*
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12181, (U.S.A.)
S. K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12181, (U.S.A.)
*
† Present address: Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

Lattice-matched Ga0.47In0.53As was epitaxially grown on InP substrates by the reaction of triethylgallium, triethylindium and arsine. The mobility and carrier concentration in these layers were determined by sequential etch and Hall effect measurements made on the grown layers. These measurements show a considerable fall–off in mobility in the vicinity of the interface, accompanied by a rapid increase in electron concentration. In situ chloride etching of the substrate, prior to Ga–In–As growth, is shown to reduce significantly but not eliminate these interface effects. In this paper we outline possible reasons for these effects, based on measurements made on films grown with and without substrate etching and also on measurements of the effect of etching on the substrate itself.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 145
Copyright
Copyright © Materials Research Society 1982

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References

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