SrTiO3 thin film preparation onto Si substrates using RF magnetron sputtering has been studied for a high capacitance density required for the next generation of LSI's. Structural and chemical analysis on the interface between SrTiO3 film and Si was carried out with cross-sectional TEM, EDX, and AES. Dielectric properties were measured on AuTi/SrTiO3/Si/Ti/Au capacitors. The as-grown dielectric films on Si were analyzed and found to consist of three layers; SiO2, amorphous SrTiO3 and crystalline SrTiO3, from interface toward film surface. By annealing at 600 °C, the amorphous SrTiO3 layer was recrystallized, and consequently the capacitance value increased. A typical specific capacitance was 4.7 fF/μm2 and the leakage current was in the order of 10−8 A/cm2, for 180 nm thick SrTiO3 film. The dielectric constant decreased from 147 to 56 with decreasing SrTiO3 film thickness from 480 nm to 80 nm. This is due to the low dielectric constant SiO2 layer (ε=3.9) at the interface. From the film thickness dependence of the ε value, the SiO2 layer thickness was calculated to be 3.9 nm, which agreed well with the value directly observed in the TEM.

To avoid SiO2 layer formation, barrier layers between SrTiO3 and Si have been studied. Among various refractory and noble metals, RuSi and a multi-layer of Pt/Ti have been found to be promising candidates for the barrier material. When RuSi film or Pt/Ti film was formed between SrTiO3 film and Si substrate, dielectric constant of about 190 was obtained in dependent of the SrTiO3 film thickness in the range of 80–250 nm. Analysis on the barrier layers was performed by means of RBS, XPS and XRD.