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Interfacial Design of Silicon/Polypyrrole Junctions

Published online by Cambridge University Press:  21 March 2011

Namyong Y. Kim ,
Inge E. Vermeir  and
Paul E. Laibinis
Namyong Y. Kim
Affiliation:
Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139-4307, U.S.A
Inge E. Vermeir
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139-4307, U.S.A
Paul E. Laibinis
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139-4307, U.S.A
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Abstract

Hydrogen-terminated silicon surfaces exposing a molecular film of covalently grafted pyrrole units were formed by a solution-phase reaction using the organolithium reagent 5-(N-pyrrolyl)pentyllithium. Electrochemical polymerization of pyrrole onto native hydrogen-terminated silicon surfaces and these chemically modified supports produced silicon/polypyrrole junctions that showed diode-like characteristics, with those formed on the latter substrate exhibiting higher current densities and better ideality factors. The presence of the grafted pyrrole films on silicon provided a better electrochemical control over the polymerization process and yielded smoother polypyrrole films than on the native hydrogen-terminated silicon supports. Impedance measurements revealed that the electrical improvements to the silicon/polypyrrole junctions were a consequence of incorporating sites on the silicon surface for direct contact between the conducting polymer and the semiconductor, as the barrier height of the junction appeared to be unaffected by the chemical modification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 598: Symposium BB – Electrical, Optical, & Magenetic Properties...V , 1999 , BB5.6
Copyright
Copyright © Materials Research Society 1999

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