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Interfacial Structure of In/Pt/GaAs Heterojunction Ohmic Contacts

Published online by Cambridge University Press:  26 February 2011

D. C. Marvin ,
N. A. Ives  and
M. S. Leung
D. C. Marvin
Affiliation:
Chemistry and Physics Laboratory, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
N. A. Ives
Affiliation:
Chemistry and Physics Laboratory, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
M. S. Leung
Affiliation:
Chemistry and Physics Laboratory, The Aerospace Corporation, P.O. Box 92957, Los Angeles, CA 90009
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Abstract

Graded heterojunction InGaAs ohmic contacts to n-GaAs have been prepared which show improved electrical and morphological properties compared with other diffused contacts. The improvements result primarily from the use of a thin 400 A Pt layer between the 4000 Â In layer and the substrate to control the reaction of the In and the GaAs. A study of chemically etched samples using energy dispersive x-ray (EDX) analysis has revealed the formation of a smooth In Ga, As heterojunction interface. Evidence is also presented that the heterojunction regions are epitaxial. A smooth, uniform interface of this type is not formed in other diffused contact systems, such as In/GaAs and Ni/Au-Ge/GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 443
Copyright
Copyright © Materials Research Society 1986

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References

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