Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T22:18:03.423Z Has data issue: false hasContentIssue false
  • English
  • Français

Internal Stress in Nitrogen Doped Diamond-Like a-C:H Films

Published online by Cambridge University Press:  25 February 2011

D. Franceschini ,
C. Achete ,
F. Freire Jr.  and
G. Mariotto
D. Franceschini
Affiliation:
COPPE, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, Rj, Brazil
C. Achete
Affiliation:
COPPE, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, Rj, Brazil
F. Freire Jr.
Affiliation:
Pontifice Universidade Católica do Rio de Janeiro, Brazil
G. Mariotto
Affiliation:
Dipartimento de Fisica, Universita di Trento, Povo, Italy
Get access

Abstract

Results of a study on internal stress, hardness and structure of nitrogen doped amorphous hydrogenated hard carbon films deposited by r.f. glow discharge on silicon are presented. Films obtained for different bias voltage (Vb), N2 partial pressure and total gas pressure were characterized by Nuclear Reaction (NR), Elastic Recoil Detection (ERD), Rutherford Back-Scattering (RBS), Infrared Spectroscopy (IR) and Raman Scattering. The elemental composition, density and structure are correlated with Vickers hardness, and internal stress values obtained by the substrate bending method. It has been observed that internal stress considerably decreases with increasing nitrogen content, contrary to the behavior shown by hardness, structure and hydrogen concentration, which remain unchanged.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 270: Symposium M – Novel Forms of Carbon , 1992 , 481
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bubenzer, A., Dischler, B., Brandt, G., J. Appl. Phys. 54(1983), 4950.Google Scholar
2. Zou, J. W., Reichelt, K., Schmidt, K. and Dischler, B., J. Appl. Phys. 65(1989), 3914.Google Scholar
3. Han, H. X. and Feldman, B. J., Solid State Comm. 65(1988), 921.Google Scholar
4. Kalish, R., Amir, O., Brener, P., Spits, R. A. and Derry, T.E., Appl. Phys. A 52(1991), 48.Google Scholar
5. Kaufman, J.H., Metin, S. and Saperstein, D. O., Phys. Rev. B 39(1983), 13053 Google Scholar
6. Tamor, M. A., Haire, J. A., Wu, C. H. and Hars, K. C., Appl. Phys. Lett. 54(1989), 123 Google Scholar
7. Angus, J. C., Diamond and Related Materials 1(1991), 61.Google Scholar