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Interpretation of Transient Photocurrents in Coplanar and Sandwich PIN Microcrystalline Silicon Structures

Published online by Cambridge University Press:  21 March 2011

Steve Reynolds ,
Vladimir Smirnov ,
Charlie Main ,
Friedhelm Finger  and
Reinhard Carius
Steve Reynolds
Affiliation:
School of Computing and Advanced Technologies, University of Abertay Dundee, Bell Street, Dundee U.K.
Vladimir Smirnov
Affiliation:
School of Computing and Advanced Technologies, University of Abertay Dundee, Bell Street, Dundee U.K.
Charlie Main
Affiliation:
School of Computing and Advanced Technologies, University of Abertay Dundee, Bell Street, Dundee U.K.
Friedhelm Finger
Affiliation:
Forschungszentrum Jülich, Institute for Photovoltaics, D-52425 Jülich, Germany.
Reinhard Carius
Affiliation:
Forschungszentrum Jülich, Institute for Photovoltaics, D-52425 Jülich, Germany.
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Abstract

We report on the use of coplanar transient photoconductivity and post-transit time-of-flight spectroscopy techniques in the study of carrier transport in microcrystalline silicon films prepared over a range of crystallinities. Coplanar samples are susceptible to post-deposition oxidation and reversible adsorption of atmospheric gases, which may alter the apparent density of states. Coplanar measurements suggest lower deep defect densities in more highly crystalline films, but this is due at least in part to an increased occupancy of these states. A comparison of results obtained using both techniques suggests anisotropic transport, with reduced band tailing (greater structural order) along the direction of film growth, a larger defect concentration around the column boundaries, and a higher defect density within the amorphous tissue than in optimised single-component amorphous silicon films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A5.7
Copyright
Copyright © Materials Research Society 2004

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References

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