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Intersubband Transitions in InAs/AlSb Quantum Wells

Published online by Cambridge University Press:  11 February 2011

J. Li ,
K. Kolokolov ,
C. Z. Ning ,
D. C. Larraber ,
G. A. Khodaparast ,
J. Kono ,
K. Ueda ,
Y. Nakajima ,
S. Sasa  and
M. Inoue
J. Li
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035
K. Kolokolov
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035
C. Z. Ning
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035
D. C. Larraber
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
G. A. Khodaparast
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
J. Kono
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
K. Ueda
Affiliation:
Department of Electrical Engineering, Osaka Institute of Technology, Osaka, Japan
Y. Nakajima
Affiliation:
Department of Electrical Engineering, Osaka Institute of Technology, Osaka, Japan
S. Sasa
Affiliation:
Department of Electrical Engineering, Osaka Institute of Technology, Osaka, Japan
M. Inoue
Affiliation:
Department of Electrical Engineering, Osaka Institute of Technology, Osaka, Japan
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Abstract

We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k·p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M9.2
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Mailhiot, C. and Smith, D. L., J. Vac. Sci. Technol. A 7, 445 (1989).Google Scholar
[2] Mohseni, H., Michel, E., Sandoen, Jan, Razeghi, M., Mitchel, W., and Brown, G., Appl. Phys. Lett, 71, 1403 (1997)Google Scholar
[3] Many laser related applications based on Antimonide materials can be found in, Antimonide-r elated strained-layer hetero structures, Manasreh, M.O. (ed.), OPA (1997, Amsterdam).Google Scholar
[4] Liu, A. and Ning, C. Z., Appl. Phys. Lett. 76, 1984 (2000)Google Scholar
[5] Liu, A. and Ning, C. Z., in “Nonlinear Optics: Materials, Fundamentals and Applications”, (Optical Society of America, Washington DC, 2000), pp. 56–58.Google Scholar
[6] Tuttle, G., Kroemer, H., and English, J. H., J. Appl. Phys. 65, 5239 (1989)Google Scholar
[7] Kroemer, H., Nguyen, C., and Brar, B., J. Vac. Sci. Technol. B10, 1769 (1992)Google Scholar
[8] Chadi, D. J., Phys. Rev. B 47, 13478 (1993)Google Scholar
[9] Lin-Chuang, P. J. and Yang, M. J., Phys. Rev. B 48, 5338 (1993).Google Scholar
[10] Warburton, R. J., Gauer, C., Wixforth, A., Kotthaus, J. P., Brar, B., and Kroemer, H., Phys. Rev. B 53, 7903 (1996).Google Scholar
[11] Ando, T., Solid State Commun. 21, 133 (1977).Google Scholar
[12] Allen, S. J., Tsui, D. C., and Vinter, B., Solid State Commun. 20, 425 (1976).Google Scholar
[13] Chuang, S. L., Luo, M. S.-C., Schmitt-Rink, S., and Pinczuk, A., Phys. Rev. B 46, 1897 (1992).Google Scholar
[14] Huang, D., Gumbs, G., and Manasreh, M. O., Phys. Rev. B 52, 14126 (1995).Google Scholar
[15] Haug, H. and Koch, S. W., Quantum theory of the optical and electronic properties of semiconductors, 2nd, World Scientific, (1993, Singapore).Google Scholar
[16] Chow, W. and Koch, S. W., Semiconductor-Laser Physics, Spinger-Verlag, (1994, Berlin Heidelberg).Google Scholar
[17] Li, J. and Ning, C. Z., to be published.Google Scholar
[18] See, e.g., Stradling, R. A. and Wood, R. A., J. Phys. C 3, L94 (1970).Google Scholar
[19] Covington, B. C., Lee, C. C., Hu, B. H., Taylor, H. F., and Streit, D. C., Appl. Phys. Lett. 54, 2145 (1989).Google Scholar
[20] Manasreh, M. O., Szmulowicz, F., Fischer, D. W., Evans, K. R., and Stutz, C. E., Appl. Phys. Lett. 57, 1790 (1990).Google Scholar
[21] Huang, X. L. et al., J. Appl. Phys. 82, 4394 (1997).Google Scholar
[22] Ando, T., Z. Phys. B 24, 33 (1976).Google Scholar
[23] Bolognesi, C. R., Kroemer, H., and English, J. H., Appl. Phys. Lett. 61, 213 (1992).Google Scholar