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Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

Published online by Cambridge University Press:  21 March 2011

Qiaoying Zhou ,
M. O. Manasreh ,
B. D. Weaver  and
M. Missous
Qiaoying Zhou
Affiliation:
Depart of Electrical & Computer Engineering, The University of New Mexico, Albuquerque, NM 87131-1356.
M. O. Manasreh
Affiliation:
Depart of Electrical & Computer Engineering, The University of New Mexico, Albuquerque, NM 87131-1356.
B. D. Weaver
Affiliation:
Naval Research Lab, 4555 Overlook Ave., SW, Washington, DC 20375.
M. Missous
Affiliation:
Department of Electrical Engineering and Electronics, UMIST, P. O. BOX 88, Manchester M60 1QD, England, UK.
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Abstract

Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.25.1
Copyright
Copyright © Materials Research Society 2002

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