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Intrinsic Resistive Switching in Bulk SiOx Films

Published online by Cambridge University Press:  25 May 2012

Adnan Mehonic ,
Sébastien Cueff ,
Maciej Wojdak ,
Stephen Hudziak ,
Olivier Jambois ,
Christophe Labbé ,
Blas Garrido ,
Richard Rizk  and
Anthony J. Kenyon
Adnan Mehonic
Affiliation:
Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, UK
Sébastien Cueff
Affiliation:
CIMAP, UMR CNRS 6252 ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France
Maciej Wojdak
Affiliation:
Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, UK
Stephen Hudziak
Affiliation:
Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, UK
Olivier Jambois
Affiliation:
MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028, Barcelona, CAT, Spain
Christophe Labbé
Affiliation:
CIMAP, UMR CNRS 6252 ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France
Blas Garrido
Affiliation:
MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028, Barcelona, CAT, Spain
Richard Rizk
Affiliation:
CIMAP, UMR CNRS 6252 ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4, France
Anthony J. Kenyon
Affiliation:
Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, UK
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Abstract

We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. Both unipolar and bipolar programming is demonstrated.

Switching exhibits the pinched hysteresis I/V loop characteristic of RRAM/memristive systems, and on/off resistance ratios of 104:1 or higher can be easily achieved. Scanning Tunnelling Microscopy suggests that switchable conductive pathways are 10nm in diameter or smaller.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1430: Symposium E – Materials and Physics of Emerging Nonvolatile Memories , 2012 , mrss12-1430-e06-03
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Strukov, D. B., Snider, G. S., Stewart, D. R., and Williams, R. S., Nature 453(7191), 80 (2008).Google Scholar
2. Waser, R., Dittmann, R., Staikov, G., and Szot, K., Adv.Mater.21, 2632 (2009).Google Scholar
3. Kuan-Chang, Chang et al. , Electrochem. Solid-State Lett. 15, H65 (2012).Google Scholar
4. Schindler, C.; Thermadam, S.C.P.; Waser, R.; Kozicki, M.N.; Electron Devices, IEEE Transactions on, vol. 54, no.10, pp.2762–2768, (2007).Google Scholar
5. Jo, S. H. and Lu, W., Nano Letters 8(2), 392 (2008).Google Scholar
6. Yao, J., Sun, Z. Z., Zhong, L., Natelson, D., and Tour, J. M., Nano Letters 10(10), 4105 (2010). Sarikov, V. Litovchenko, I. Lisovskyy, I. Maidanchuk, and S. Zlobin, Applied Physics Letters 91(13) (2007).Google Scholar
7. Sarikov, V. Litovchenko, I. Lisovskyy, I. Maidanchuk, , and Zlobin, S., Applied Physics Letters 91(13) (2007).Google Scholar
8. Mokry, R., Simpson, P. J., and Knights, A. P., Journal of Applied Physics 105(11), 6 (2009).Google Scholar
9. McCann, M. T. P., Mooney, D. A., Rahman, M., Dowling, D. P., and MacElroy, J. M. D., ACS Applied Materials & Interfaces 3(2), 252 (2011).Google Scholar
10. Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M. and Nafria, M., Journal of Applied Physics 110, 124518 (2011).Google Scholar
11. Yao, J., Zhong, L., Natelson, D. and Tour, J. M., Applied Physics a-Materials Science & Processing 102(4), 835–839 (2011).Google Scholar
12. Yao, J. et al. , Scientific Reports 2, 242 (2012).Google Scholar
13. Chu, A. X. and Fowler, W. B., Physical Review B 41(8), 5061–5066 (1990).Google Scholar
14. Appl. Phys. Lett. 100, 083502 (2012); Memory switching properties of e-beam evaporated SiOx on N++ Si substrate Google Scholar
15. Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in an Inverter Circuit for FPGA Applications.Google Scholar