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Intrinsic Surface Defects on 4H SiC Substrates

Published online by Cambridge University Press:  01 February 2011

Mary Ellen Zvanut ,
Sarah Thomas  and
Jamiyanaa Dashdorj
Mary Ellen Zvanut
Affiliation:
mezvanut@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
Sarah Thomas
Affiliation:
saltom@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
Jamiyanaa Dashdorj
Affiliation:
saltom@uab.edu, University of Alabama at Birmingham, Physics, Birmingham, Alabama, United States
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Abstract

We have investigated a point defect, common to all SiC substrates, that is thought to be a broken carbon bond. Electron paramagnetic resonance spectroscopy performed in combination with three different etching methods using p-type, n-type, and semi-insulating substrates demonstrate that the center lies near the surface of a wafer. The results suggest that on the order of 1013 cm-2 defects are removed within the first micron of the surface of a wafer.

Keywords

defectselectron spin resonanceannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B03-03
Copyright
Copyright © Materials Research Society 2010

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References

1 Uren, M.J. and Kuball, M., Mat. Sci. Forum 556–557, 1017 (2007).Google Scholar
2 Eddy, C.R. Jr, Bassim, N.D., Mastro, M.A., et. al., Mat. Sci. Forum 527–529, 1483 (2006).Google Scholar
3 Forte-Poisson, M.A. di, Magis, M., Sarazin, N., Tordjman, M., and di, J. Persio, Phys. Stat. Sol. (a) 203, 185 (2006).Google Scholar
4 Brodsky, M.H. and Title, R.S., Phys. Rev. Lett. 23, 581 (1969).Google Scholar
5 Ishii, N., Kumeda, M. and Shimizu, T., Solid State Comm. 41, 143 (1982).Google Scholar
6 Cochrane, C.J., Lenahan, P.M. and Lelis, A.J., Appl. Phys. Lett. 90, 123501 (2007).Google Scholar
7 Poindexter, E.H. and Caplan, P.J., J. Appl. Phys. 52, 679 (1981).Google Scholar
8 Macfarlane, P.J. and Zvanut, M.E., J. Appl. Phys. 88, 4122 (2000).Google Scholar
9 Ray, E.A., Rozen, J., Dhar, S., Feldman, L.C., and Williams, J.R., J. Appl. Phys. 103, 23522 (2008).Google Scholar
10 MacFarlane, P.J., Ph.D. Dissertation, University of Alabama at Birmingham, 2000.Google Scholar
11 Zvanut, M.E., J. Phys.: Condens. Matter 16, R1341–R1367 (2004).Google Scholar
12 Weil, J.A., Bolton, J.R., and Wertz, J.E., “Electron Paramagnetic Resonance”, John Wiley & Sons, Inc, N.Y., 1994.Google Scholar
13 Son, N.T., Carlsson, P., Hassan, J. ul, Magnusson, B., and Janzen, E., Phys. Rev. B 75 155204 (2007).Google Scholar