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Investigation of Inhomogeneous In-Plane Strain Relaxation in Si/SiGe Quantum Wires by High Resolution x-ray Diffraction

Published online by Cambridge University Press:  10 February 2011

Y. Zhuang ,
C. Schelling ,
T. Roch ,
A. Daniel ,
F. Schäffler ,
G. Bauer ,
J. Grenzer ,
U. Pietsch  and
S. Senz
Y. Zhuang
Affiliation:
Institut für Halbleiterphysik, Universtät Linz, A-4040 Linz, Austria, yzhuang@hlphys.uni-linz.ac.at
C. Schelling
Affiliation:
Institut für Halbleiterphysik, Universtät Linz, A-4040 Linz, Austria, yzhuang@hlphys.uni-linz.ac.at
T. Roch
Affiliation:
Institut für Halbleiterphysik, Universtät Linz, A-4040 Linz, Austria, yzhuang@hlphys.uni-linz.ac.at
A. Daniel
Affiliation:
Institut für Halbleiterphysik, Universtät Linz, A-4040 Linz, Austria, yzhuang@hlphys.uni-linz.ac.at
F. Schäffler
Affiliation:
Institut für Halbleiterphysik, Universtät Linz, A-4040 Linz, Austria, yzhuang@hlphys.uni-linz.ac.at
G. Bauer
Affiliation:
Institut für Halbleiterphysik, Universtät Linz, A-4040 Linz, Austria, yzhuang@hlphys.uni-linz.ac.at
J. Grenzer
Affiliation:
Institut für Physik, Universtät Potsdam, D-14115 Potsdam, Germany
U. Pietsch
Affiliation:
Institut für Physik, Universtät Potsdam, D-14115 Potsdam, Germany
S. Senz
Affiliation:
Max Plank Institut für Mikrostrukturphysik, D-06120 Halle, Germany
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Abstract

The structural properties of Si/SiGe quantum wires, which were grown by local solid source molecular beam epitaxy through a Si3N4/SiO2 wire-like shadow mask, were investigated by means of high resolution x-ray coplanar and x-ray grazing incidence diffraction, as well as by transmission electron microscopy. High resolution x-ray coplanar diffraction was used to obtain the average in-plane strain in Si/SiGe wires before and after removing the Si3N4/SiO2 shadow mask. x-ray grazing incidence diffraction measurements were performed to obtain information on the shape of the wires and on the depth-dependent strain relaxation. A finite element method was used to calculate the strain distribution in the Si/SiGe wires and in the Si substrate which clearly show the influence of the Si3N4/SiO2 shadow masks on the strain status of the Si/SiGe wires in agreement with the experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 590: Symposium R – Applications of Synchrotron Radiation Techniques…V , 1999 , 207
Copyright
Copyright © Materials Research Society 2000

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References

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