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Investigation of the Properties of Electrochemically Deposited Semiconductor Materials for Thermoelectric Applications

Published online by Cambridge University Press:  01 February 2011

C.-K. Huang ,
J.A. Herman ,
N. Myung ,
J. R. Lim  and
J.-P. Fleurial
C.-K. Huang
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109USAChen-Kuo.Huang@jpl.nasa.gov
J.A. Herman
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109USAChen-Kuo.Huang@jpl.nasa.gov
N. Myung
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109USAChen-Kuo.Huang@jpl.nasa.gov
J. R. Lim
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109USAChen-Kuo.Huang@jpl.nasa.gov
J.-P. Fleurial
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109USAChen-Kuo.Huang@jpl.nasa.gov
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Abstract

At JPL, it is our desire to fabricate thermoelectric micro-devices for power generation and cooling applications using an electrochemical deposition (ECD) technique. We believe that the performance of our current micro-device developed is limited by the properties of the ECD materials. Therefore, the objective of this study is to develop ECD methods for obtaining n-type Bi2Te3 and p-type Bi2-xSbxTe3 thermoelectric materials with near bulk properties, as well as optimizing morphology and transport properties. The films of Bi2Te3 and Bi2-xSbxTe3 were initially obtained under various ECD conditions. Seebeck coefficients and transport properties were then measured along the direction parallel to the substrates before and after annealing at 250°C for 2hrs. From the data obtained, ECD n-Bi2Te3 material can achieve a high Seebeck coefficient (-189 μV/K) when it is deposited at –200 mV vs. SCE. The in-plane resistivity, in-plane mobility, and carrier concentration are 3.0 mohm-cm, 31 cm2 V−1 S−1, and 6.79 × 1019 cm−3, respectively. As for the p-type Bi2-xSbxTe3, it is possible to achieve a high Seebeck coefficient (+295 μV/K) when it is deposited at 0.3 mA/cm2. The in-plane resistivity, in-plane mobility, and carrier concentration are 9.8374 mohm-cm, 66.58 cm2 V−1 S−1, and 9.54 × 1018 cm−3, respectively. From the results of our preliminary study, we have found the conditions for depositing high quality Bi2Te3 and Bi2-xSbxTe3 materials with thermoelectric properties comparable to those of their state-of-the-art bulk samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 793: Symposium S – Thermoelectric Materials 2003 - Research and Applications , 2003 , S8.33
Copyright
Copyright © Materials Research Society 2004

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References

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