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InxGa(1-x)N Alloys as Electronic Materials

Published online by Cambridge University Press:  10 February 2011

O. K. Semchinova ,
S. E. Alexandrov ,
H. Neff  and
D. Uffmann
O. K. Semchinova
Affiliation:
LFI University of Hannover, Schneiderberg 32, 30167 Hannover, Germany.
S. E. Alexandrov
Affiliation:
Technical University St-Petersburg, Polytechnicheskaya 26, Russia.
H. Neff
Affiliation:
TZN GmbH, Neuensothriether Str. 18–20, 29345 Unterlüss, Germany.
D. Uffmann
Affiliation:
LFI University of Hannover, Schneiderberg 32, 30167 Hannover, Germany.
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Abstract

In this work, we present growth of InxGa(1-x)N films by CVD technique and their optical characterization. Experimental results indicate that these films are promising materials for semiconductor device applications. We focus on solar cells and present preliminary experimental data on prototype devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 57
Copyright
Copyright © Materials Research Society 1997

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References

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