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Ion Beam Assisted Deposition of Metal Films

Published online by Cambridge University Press:  25 February 2011

Kenji Gamo  and
Susumu Namba
Kenji Gamo
Affiliation:
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Susumu Namba
Affiliation:
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

The chtaracteristics of ion beam assisted deposition are discussed and compared with those of photon beam assisted deposition. Effects of various deposition parameters including ion species, beam energy and substrate temperature are discussed. Deposited films usually include impurities such as C and O. Inclusion of oxygen takes place by enhanced oxidation by background oxygen and may be reduced by depositing in a clean vacuum. Promising applications of maskless ion beam assisted deposition are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 531
Copyright
Copyright © Materials Research Society 1989

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References

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