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Ion Beam Induced Epitaxial Crystallization of Single Crystalline6H-SiC

Published online by Cambridge University Press:  15 February 2011

V. Heera ,
R. Kögler ,
W. Skorupa  and
E. Glaser
V. Heera
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
R. Kögler
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
E. Glaser
Affiliation:
FSU Jena, Institute of Solid State Physics, Max-Wien-Platz 1, D-07743 Jena, Germany
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Abstract

For the first time, ion beam induced epitaxial crystallization (IBIEC) hasbeen found in SiC. The effect of 300 keV Si+ irradiation throughan amorphous surface layer in single crystalline 6H-SiC at 477+5°C has beeninvestigated by RBS/C and XTEM. A shrinkage of the amorphous layer was foundafter ion irradiation at this temperature which is caused by both an iondose independent thermal regrowth of about 20 nm and an additional ion beaminduced epitaxial crystallization with a rate of about 1.5 nm/ 1016 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 387
Copyright
Copyright © Materials Research Society 1994

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References

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