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Ion Beam Modification of Silicone Rubber

Published online by Cambridge University Press:  22 February 2011

Yoshiaki Suzuki ,
Masahiro Kusakabe ,
Masaya Iwaki  and
Masaaki Suzuki
Yoshiaki Suzuki
Affiliation:
SONY Corporation. 6-7-35 Kitashinagawa Shinagawa-ku, Tokyo, 141, Japan
Masahiro Kusakabe
Affiliation:
SONY Corporation. 6-7-35 Kitashinagawa Shinagawa-ku, Tokyo, 141, Japan
Masaya Iwaki
Affiliation:
RIKEN, Hirosawa 2-1, Wako, Saitama, 351-01, Japan
Masaaki Suzuki
Affiliation:
Government Industrial Development Laboratory, Sapporo, 001, Japan
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Abstract

Ion implantation in silicone rubber has been carried out in order to study its effects on structure and chemical states. H+-, He+-, C+-, N+-, N2+-, O+-, O2+-, Ne+-, Na+-, Ar+-, and K+- ion implantations were performed at an energy of 150 keV with doses ranging from 1×1013 to 1×1017 ions/cm2 at room temperature. The depth profiles of the ion implanted elements and host elements were investigated by means of XPS and SIMS. The chemical properties were studied by FT-IR-ATR and Raman spectroscopy. XPS results indicated that most of the implanted elements showed a Gaussian like distribution in the silicone polymer matrix, but implanted He+, Ne+, and Ar+ could not be detected. Results of FT-IR-ATR showed that ion implantation broke CH3 and Si-O bonds to form new radicals such as SiOH, >C=0, CH2 and SiHx and the effects varied depending on the implanted ion species. The Raman spectroscopy results showed that ion implanted silicone contained both sp3 and sp2 bonded carbon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 153: Symposium J – Interfaces Between Polymers, Metals, and Ceramics , 1989 , 223
Copyright
Copyright © Materials Research Society 1989

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