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Ion Beam Processing of Carbon Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

Richard L.C. Wu ,
William C. Lanter ,
John Wrbranek ,
Peter B. Kosel  and
Charles A. Dejoseph
Richard L.C. Wu
Affiliation:
K Systems Corporation, 1522 Marsetta Drive, Beavercreek, Ohio 45432
William C. Lanter
Affiliation:
K Systems Corporation, 1522 Marsetta Drive, Beavercreek, Ohio 45432
John Wrbranek
Affiliation:
K Systems Corporation, 1522 Marsetta Drive, Beavercreek, Ohio 45432
Peter B. Kosel
Affiliation:
University of Cincinnati, Department of Electrical and Computer Engineering, Cincinnati, Ohio 45221
Charles A. Dejoseph
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433
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Abstract

Amorphous carbon nitride films have been deposited by two different methods: (1) direct ion beam deposition from a gas mixture of CH4/N2; and (2) nitrogen ion beam sputtering of a graphite target. The chemical composition, deposition rate, chemical bond and optical properties of the as-deposited films were studied as a function of the process parameters. In the first technique, ions (CH3+, N2+, N+, NH4+, NH3+, NH2+, HCN+, CN+ and N2H2+) were directly impacted onto the substrate surface. The effects of RF power, CH4/N2 gas ratio, total gas flow, pressure, and ion energy on the film properties and deposition rates were studied. In the second technique, a flux of energetic nitrogen ions (N2+, N+), generated by N2 and N2/Ar plasmas, were used to directly sputter a graphite target. In this case, the effects of RF power, gas mixture (N2, N2/Ar), and ion energy on the film characteristics and deposition rates were determined. The properties of the films generated by the two alternative techniques were also compared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 245
Copyright
Copyright © Materials Research Society 2000

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