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Ion Beam Synthesis of Buried COXNi1-xSi2 Layers in Silicon

Published online by Cambridge University Press:  22 February 2011

M.F. Wu ,
J. De Wachter ,
A.-M. Van Bavel ,
H. Pattyn ,
G. Langouche ,
J. Vanhellemont ,
H. Bender ,
K. Temst ,
B. Wuyts  and
Y. Bruynseraede
M.F. Wu
Affiliation:
Department of Technical Physics, Peking University, Beijing, PR China, and Instituut voor Kern- en Stralingsfysica, University of Leuven, B-3001 Leuven, Belgium
J. De Wachter
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
A.-M. Van Bavel
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
H. Pattyn
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Temst
Affiliation:
Laboratorium voor Vaste-Stoñysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
B. Wuyts
Affiliation:
Laboratorium voor Vaste-Stoñysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
Y. Bruynseraede
Affiliation:
Laboratorium voor Vaste-Stoñysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
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Abstract

Heteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary suicide layer contains 11% type B and 89 % type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 711
Copyright
Copyright © Materials Research Society 1994

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References

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