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Ion Beam Synthesis of Buried COXNi1-xSi2 Layers in Silicon

Published online by Cambridge University Press:  22 February 2011

M.F. Wu ,
J. De Wachter ,
A.-M. Van Bavel ,
H. Pattyn ,
G. Langouche ,
J. Vanhellemont ,
H. Bender ,
K. Temst ,
B. Wuyts  and
Y. Bruynseraede
M.F. Wu
Affiliation:
Department of Technical Physics, Peking University, Beijing, PR China, and Instituut voor Kern- en Stralingsfysica, University of Leuven, B-3001 Leuven, Belgium
J. De Wachter
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
A.-M. Van Bavel
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
H. Pattyn
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Temst
Affiliation:
Laboratorium voor Vaste-Stoñysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
B. Wuyts
Affiliation:
Laboratorium voor Vaste-Stoñysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
Y. Bruynseraede
Affiliation:
Laboratorium voor Vaste-Stoñysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
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Abstract

Heteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary suicide layer contains 11% type B and 89 % type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 711
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 White, A.E., Short, K.T., Dynes, R.C., Garno, J.P. and Gibson, J.M., Appl. Phys.Lett. 50, 95 (1987); Mater. Res. Soc. Symp. Proc. 74, 481 (1987).Google Scholar
2 Wu, M.F., Vantomme, A., Langouche, G., Vanderstraeten, H. and Bruynseraede, Y., Nucl. Instr. Meth. B 54, 444 (1991).Google Scholar
3 Kohlhof, K., Mantl, S., Strizker, B. and Jager, W., Nucl. Instr. Meth. B 39, 276 (1989).Google Scholar
4 Bulle-Lieuwma, C.W.T., van Ommen, A.H. and van IJzendoorn, L.J., Appl. Phys. Lett. 54, 244(1988).Google Scholar
5 Tung, R.T., Hellman, F., Gibson, J.M. and Boone, T., Mater. Res. Soc. Symp. Proc. 91, 451 (1987).Google Scholar
6 d'Heurle, F.M., Anfiteatro, D.D., Deline, V.R. and Finstad, T.G., Thin Solid Films 128, 107 (1985).Google Scholar
7 White, A.E., Short, K.T., Dynes, R.C., Gibson, J.M. and Hull, R., Mater. Res. Soc. Symp. Proc. 100, 3(1988).Google Scholar
8 Wu, M.F., Vantomme, A., Langouche, G., Maex, K. and Vanhellemont, J., Crystal Properties and Preparation 32–34, 169 (1991).Google Scholar
9 Wu, M.F., Vantomme, A., Langouche, G., Maex, K., Vanderstraeten, H. and Bruynseraede, Y., Appl. Phys. Lett. 57, 1973 (1990).Google Scholar
10 Doolittle, L.R., Nucl. Instr. Meth. B9, 344 (1985).Google Scholar
11 Vanhellemont, J., Bender, H., Wu, M.F., De Wachter, J., Hendrickx, P., Pattyn, H., Van Bavel, A.-M, Langouche, G., Maenhoudt, M. and Bruynseraede, Y., Appl. Phys. Lett. 62, 2795 (1993).Google Scholar
12 Vanderstraeten, H., Bruynseraede, Y., Wu, M.F., Vantomme, A., Langouche, G. and Phillips, J.M., Appl. Phys. Lett. 57, 135 (1990).Google Scholar
13 Gibson, J.M., Tung, R.T., Phillips, J.M. and Poate, J.M., Mater. Res. Soc. Symp. Proc. 25, 405 (1984).Google Scholar
14 Wu, M.F., De Wachter, J., Van Bavel, A.-M., Pattyn, H., Langouche, G., Vanhellemont, J., Bender, H., Maenhoudt, M. and Bruynseraede, Y., Appl. Phys. Lett. 63, 542 (1993).Google Scholar