Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T09:45:43.230Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Synthesis of IrSi3 by Implantation of 2 MeV Ir Ions+

Published online by Cambridge University Press:  25 February 2011

T. P. Sjoreen ,
H.-J. Hinneberg  and
M. F. Chisholm
T. P. Sjoreen
Affiliation:
Solid State Division Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831
H.-J. Hinneberg
Affiliation:
Solid State Division Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831
M. F. Chisholm
Affiliation:
Solid State Division Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831
Get access

Abstract

The formation of a buried IrSi3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450–550°C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi3 layer is produced at 550°C by implanting ≥ 3.4 × 1017 Ir/cm2 and subsequently annealing for 1 h at 1000°C plus 5 h at 1100°C. At a dose of 3.4 × 1017 Ir/cm2, the thickness of the layer varied between 120 and 190 nm and many large IrSi3 precipitates were present above and below the film. Increasing the dose to 4.4 × 1017 Ir/cm2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 243
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Wittmer, Marc, Phys. Rev. B42, 5249 (1990).CrossRefGoogle Scholar
[2] Tsaur, Bor-Yeu, Weeks, M. M., Trubiano, R., Pellegrini, P. W., and Yew, T.-R., IEEE Electron Device Letters 9, 650 (1988).Google Scholar
[3] Petersson, S., Baglin, J., Hammer, W., D'Heurle, F., Kuan, T.S., Ohdomari, I., de Sousa Pires, J., and Tove, P., J.Appl Phys. 50, 3357 (1979).Google Scholar
[4] White, Alice E., Short, K. T., Dynes, R. C., Garno, J. P., and Gibson, J. M., Appl Phys. Lett. 50, 95 (1987).CrossRefGoogle Scholar
[5] Chu, J. J., Chen, L. J., and Tu, K. N., J. Appl Phys. 63, 1163 (1988).Google Scholar
[6] Mantl, S., Materials Sci. Rep. 8, 1 (1992).Google Scholar
[7] Yu, K. M., Katz, B., Wu, I. C., and Brown, I. G., Nucl. Instr. Meth. B58, 27 (1991).Google Scholar
[8] Short, K. T., White, Alice E., Eaglesham, D. J., Jacobson, D. C., and Poate, J. M., Mat. Res. Soc. Proc. 235, 279 (1992).Google Scholar
[9] Sjoreen, T. P., Hinneberg, H.-J., and Chisholm, M. F., to be published.Google Scholar