Hostname: page-component-84b7d79bbc-g7rbq Total loading time: 0 Render date: 2024-07-29T15:41:16.077Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Yield, Sputter Rate, and Sims Matrix Effects in Quantitative Analysis of (AlxGa1−x)0.5N0.5

Published online by Cambridge University Press:  10 February 2011

D.L. Lefforge ,
Y.L. Chang ,
M. Ludowise  and
E.L. Allen
D.L. Lefforge
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94304
Y.L. Chang
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94304
M. Ludowise
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94304
E.L. Allen
Affiliation:
San Jose State University, San Jose, CA 95192
Get access

Abstract

Aluminum gallium nitride (AlGaN) material is used in GaN-based electronic and optoelectonic devices. The Al and Ga ratio can be adjusted to produce material with different compositions and electronic properties. In this set of experiments epitaxial films of (AlxGa1−x)0.5N0.5 with x ranging from 0 to 1 were investigated. Primary composition was determined with Rutherford backscattering spectrometry (RBS). From secondary ion mass spectrometry (SIMS) profiles a correlation of secondary ion counts was made to RBS determinations of primary composition. The SIMS data was also used to determine sputter rate and the relative sensitivity factor (RSF) of O, Mg and Si in (AlxGa1−x)0.5N0.5 material. The correlation of SIMS data with RBS and knowledge of the sputter rate and RSF dependence on composition are essential for the characterization of (AlxGa1−x)0.5N0.5 films

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 155
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Smith, S.P. in Secondary Ion Mass Spectrometry SIMS IX, edited by Benninghoven, A., Nihei, Y., Shimizu, R., and Werner, H.W., John Wiley and Sons Ltd., Chichester, England, 1994, p. 227–230.Google Scholar
2. Gao, Y. and Harmand, J.C., J. Vac. Sci. Technol. A 6, p. 2243 (1988).Google Scholar
3. McPhail, D.S. in Secondary Ion Mass Spectrometry Principles and Applications, edited by Vickerman, J.C., Brown, A. and Reed, N.M., Oxford University Press, New York, 1989, p. 105–148.Google Scholar
4. Gao, Y., Mitha, S., Huang, C., Clark-Phelps, R., Wang, L., and Shingu, K. in Secondary Ion Mass Spectrometry SIMS XI, edited by Gillen, G., Lareau, R., Bennett, J., and Stevie, F., John Wiley and Sons Ltd., Chichester, England, 1998, p. 193–196.Google Scholar
5. Gao, Y., Kirchhoff, J., Mitha, S., Erickson, J.W., Huang, C., and Clark-Phelps, R. in Gallium Nitride and Related Materials 11, edited by Abernathy, C.R., Amano, H., and Zolper, J.C. (Mater. Res. Soc. Proc. 468, Pittsburgh, PA 1997), p. 275–279.Google Scholar
6. Ziegler, J.F., TRIM Program, Contact Ziegler, J.F., IBM T.J. Watson Research Center, Yorktown Heights, New York 10596.Google Scholar
7. Griffis, D.P., Loesing, R., Ricks, D.A., Bremser, M.D. and Davis, R.F. in Secondary Ion Mass Spectrometry SIMS XI, edited by Gillen, G., Lareau, R., Bennett, J., and Stevie, F., John Wiley and Sons Ltd., Chichester, England, 1998, p. 201–204.Google Scholar
8. Erickson, J.W., Gao, Y. and Wilson, R.G. in Gallium Nitride and Related Materials, edited by Ponce, F.A., Dupuis, R.D., Nakamura, S., and Edmond, J.A. (Mater. Res. Soc. Proc. 395, Pittsburgh, PA 1996), p. 363–368.Google Scholar