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Iron Sulfide (FeS2) Thin Films From Single-Source Precursors by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

Published online by Cambridge University Press:  10 February 2011

Paul O'Brien ,
David J. Otway  and
Jin-Ho Park
Paul O'Brien
Affiliation:
Manchester Materials Sciences Centre and Department of Chemistry, University of Manchester, Manchester, M13 9PL, UKpaul.obrien@man.ac.uk
David J. Otway
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AY, UK
Jin-Ho Park
Affiliation:
Manchester Materials Sciences Centre and Department of Chemistry, University of Manchester, Manchester, M13 9PL, UK Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AY, UK Email: j.h.park@ic.ac.uk
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Abstract

Dialkyl (or mixed alkyl)-dithiocarbamato iron(III) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by the reaction of FeCl3with dialkyldithiocarbamate sodium salts and characterized by a number of analytical techniques. Good quality thin films of FeS2 have been prepared from the single-source metal organic precursor, [Fe(S2CNMeiPr)3], by AACVD. XRD patterns of the films indicated crystalline iron sulfide (FeS2) grown at between 375 – 450 °C. SEM images show the films to have reasonable morphology and to be crystalline.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 133
Copyright
Copyright © Materials Research Society 2000

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References

1 Ennaoui, A., Fiechter, S., Pettenkofer, C., Alonso-Vante, N., Buker, K., Bronold, M., Hopfner, C., and Tributsch, H., Sol. Energy Mater. Sol. Cells 29, 289 (1993).Google Scholar
2 Schleigh, D.M. and Chang, H.S.W., J. Crystal Growth 112, 737 (1991).Google Scholar
3 Thomas, B., Hoepfner, C., Ellmer, K., Fiechter, S. and Tributsch, H., J. Crystal Growth 146, 630 (1995).Google Scholar
4 Hoepfner, C., Ellmer, K., Ennaoui, A., Pettenkofer, C., Fiechter, S. and Tributsch, H., J. Crystal. Growth, 151, 325 (1995).Google Scholar
5 Thomas, B., Cibik, T., Hoepfner, C., Diesner, K., Ehlers, G., Fiechter, S. and Ellmer, K., J. Mat. Sci. 9, 61 (1998).Google Scholar
6 Meester, B., Reijnen, L., Goossens, A. and Schoonman, J., J. Phys. IV France 9, Pr8-613 (1999).Google Scholar
7 Smestad, G., Ennaoui, E., Fiechter, S., Tributsch, H., Hofman, W. K. and Birkholz, M., Sol. Energy Mater. 20, 149, 1990.Google Scholar
8 Ferrer, I.J. and Sanchez, C., J. Appl. Phys. 70, 2641 (1991).Google Scholar
9 Birkholz, M., Lichtenberger, D., Hoepfher, C. and Fiechter, S., Sol. Energy Mater. Sol. Cells 27, 243 (1992).Google Scholar
10 Bausch, S., Sailer, B., Keppner, H., Willeke, G., Bucher, E. and Frommeyer, G. Appl. Phys. Lett. 57, 25 (1990).Google Scholar
11 Ennaoui, A., Schlichtlorel, G., Fiechter, S. and Tributch, H., Sol. Energy Mater. Sol. Cells 25, 169(1992).Google Scholar
12 Smestad, G., Silva, A. Da, Tributsch, H., Fiechter, S., Kunst, M., Meziani, N. and Birkholz, M., Sol. Energy Mater. 18, 299 (1989).Google Scholar
13 Rezig, B., Dalman, H., Kanzai, M., Renewable Energy 2, 125 (1992).Google Scholar
14 O'Brien, P., Otway, D.J. and Walsh, J.R., Thin Solid Films 315, 57 (1998).Google Scholar