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Is interstitial hydrogen playing a role in the Staebler-Wronski effect ?

Published online by Cambridge University Press:  17 March 2011

C. Longeaud  and
D. Roy
C. Longeaud
Affiliation:
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Supélec, Universités Paris VI et XI, Plateau de Moulon 91190, Gif sur Yvette, France.
D. Roy
Affiliation:
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Supélec, Universités Paris VI et XI, Plateau de Moulon 91190, Gif sur Yvette, France.
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Abstract

We have studied the density of states (DOS) of many different series of a-Si:H samples prepared in radio-frequency powered deposition systems. Samples were obtained from decomposition of pure silane or of mixtures of silane with argon, helium or hydrogen. The DOS were investigated in the as-deposited, light-soaked and annealed states. For all the samples the light-soaking behaviour is almost the same: 2 min of light-soaking are enough to increase the deep states density and after full saturation both the deep states and the conduction band tail exhibit a large increase. The effect of the annealing process is sample dependent, the DOS being restored for some samples or almost insensitive to the annealing process in some cases. To explain all these results, we propose a mechanism of light-soaking/annealing in which interstitial H2 molecules and voids play a major role.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A14.4
Copyright
Copyright © Materials Research Society 2001

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References

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