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Ito/A-Si:H Schottky Photodiode With Low Leakage Current And High Stability

Published online by Cambridge University Press:  10 February 2011

Qinghua Ma ,
Arokia Nathan  and
R.V.R. Murthy
Qinghua Ma
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Waterloo, Waterloo, Ontario, CanadaN2L 3G1
Arokia Nathan
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Waterloo, Waterloo, Ontario, CanadaN2L 3G1
R.V.R. Murthy
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Waterloo, Waterloo, Ontario, CanadaN2L 3G1
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Abstract

We report the design, fabrication, and characterization of an indium tin oxide/hydrogenated amorphous silicon (ITO/a-Si:H) Schottky photodiode based on room temperature deposition of ITO. The optical transmittance of the ITO is larger than 80% in the visible light range and its resistivity is less than 6 x 10-4 Ω-cm. The fabricated photodiode exhibits low leakage current and stable I-V characteristics. The leakage current is 7x10-10 A/cm2when biased at -2 V and the shift in leakage current stabilizes to a value less than 9% after 2 seconds of biasing at -2 V. The improvement in performance can be attributed to the high integrity ITO/a-Si:H interface achieved with the low temperature deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 231
Copyright
Copyright © Materials Research Society 2000

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References

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