Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-17T18:39:28.977Z Has data issue: false hasContentIssue false
  • English
  • Français

I-V And C-V Characteristics of nGaAs-nInSb Heterojunctions Obtained by Pulsed Laser Deposition Technique

Published online by Cambridge University Press:  21 March 2011

Karapet E. Avdjian
Karapet E. Avdjian*
Affiliation:
Department of Semiconductor Electronics, Institute of Radiophysics & Electronics, National Ac. Sci. of Armenia, 1 Brs. Alikhanian st., Ashtarak, 378410, Armenia
Get access

Abstract

Using pulsed laser deposition technique, nGaAs-nInSb heterojunctions (HJs) are obtained. Their electrical properties are studied. The Current-Voltage characteristics show that obtained HJs possess rectifying properties. The rectification coefficient depends strongly on the doping level of GaAs substrate. The linear dependence of C−2 (V) curve in Capacitance-Voltage characteristics, as well as the change of photo-response sign with wavelength, indicates that the HJs have abrupt interface, which is, to the best of our knowledge, a novel result for these HJ materials. The full number of interface states arising due to the lattice mismatch is determined which is in agreement with Hall measurements. Current-Voltage characteristics of obtained HJs are analogous to those of metal-semiconductor junction. Based on the obtained results the energy band diagrams of nGaAs-nInSb HJ is constructed taking into account the interface states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.25.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hinkley, E. D., Rediker, R. H., Solid State Electronics, v. 10, 671 (1967).Google Scholar
2. Alexanian, A.G. et al. The Int. Journ. IR and MM Waves, v. 18, N1 (1997).Google Scholar