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Kinetic Monte Carlo Simulations of Ge Segregation During Epitaxial Growth of Si-SixGel-x Heterostructures

Published online by Cambridge University Press:  22 February 2011

J. Deppe ,
J. V. Lill ,
D. J. Godbey  and
K. D. Hobart
J. Deppe
Affiliation:
Naval Research Laboratories Washington, DC 20375
J. V. Lill
Affiliation:
Naval Research Laboratories Washington, DC 20375
D. J. Godbey
Affiliation:
Naval Research Laboratories Washington, DC 20375
K. D. Hobart
Affiliation:
Naval Research Laboratories Washington, DC 20375
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Abstract

The temperature dependence of germanium surface segregation during growth by solid source SiGe molecular beam epitaxy was studied by x-ray photoelectron spectroscopy and kinetic Monte Carlo (KMC) modeling. Germanium segregation persisted at temperatures 60ºC below that predicted by a two-state exchange model. KMC simulations, where film growth, surface diffusion, and surface segregation are modeled consistently, successfully describe the low temperature segregation of germanium. Realistic descriptions of MBE must follow the physical rates of the growth, surface diffusion, and surface segregation processes. A specific, step mediated exchange mechanism is also considered and shown to lead to surface segregation. While this model of Ge segregation seems possible, more work is necessary to obtain a consistent set of energy barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 47
Copyright
Copyright © Materials Research Society 1994

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References

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