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The Kinetics of Platinum Silicide Formation Using CW Lamp Annealing

Published online by Cambridge University Press:  22 February 2011

C. G. Hopkins ,
S. M. Baumann  and
R. J. Blattner
C. G. Hopkins
Affiliation:
Charles Evans and Associates, 1670 S. Amphlett Boulevard Suite #120, San Mateo, California, 94402
S. M. Baumann
Affiliation:
Charles Evans and Associates, 1670 S. Amphlett Boulevard Suite #120, San Mateo, California, 94402
R. J. Blattner
Affiliation:
Charles Evans and Associates, 1670 S. Amphlett Boulevard Suite #120, San Mateo, California, 94402
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Abstract

The reaction of a metal film with polycrystalline silicon to form a metal silicide has been shown to occur very rapidly when using cw lamp annealing in contrast to conventional furnace annealing. The faster reaction kinetics implies a more efficient energy coupling (radiative heating) versus the conductive/convective heat transfer processes which dominate furnace annealing. From Rutherford backscattering determinations of the thickness of PtSi formed as a function of anneal time (t), we have found the relationship to be linear in t with growth rates in the rangg 10−7–10−6 cm/sec (10 – 100Å/sec) for the temperature range 375 – 450° C. From these data the activation energy for the formation of PtSi was calculated to be 1.8± 0.2eV for cw lamp annealing, in reasonable agreement with literature values from conventional furnace annealing experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 87
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Powell, R.A., Yep, T.O. and Fulks, R.T., Appl. Phys. Lett. 39, 150 (1981).Google Scholar
2. Fulks, R.T., Powell, R.A. and Stacy, W.T., IEEE Electron Device Letters, Vol EDL–3 No. 7 (1982).Google Scholar
3. Gat, A., IEEE Electron Device Letters, Vol EDL–2 p. 85 (1981).CrossRefGoogle Scholar
4. Nishiyama, K., Arai, K. and Watanabe, N., JAP. J. of APPL. PHYS. 19, L563 (1980).Google Scholar
5. Sedgwick, T.O., J. Electrochem. Soc. 130 No. 2 p. 484 (1983).Google Scholar
6. Fulks, R.T., Russo, C.J., Downey, D.F., Hanley, P.R. and Stacy, W.T., Metastable Materials Formation by Ion Implantation, Picraux, and Chdyke, , eds. (Elsevier Science Publishing Co. p. 395 (1982).)Google Scholar
7. Final Report NSF/SBIR Phase I April (1983).Google Scholar
8. Hiraki, A., Nicolet, M-A. and Mayer, J.W., Appl. Phys. Lett. 18, 178 (1971).Google Scholar
9. Crider, C.A. and Poate, J.M., Appl. Phys. Lett. 36, 417 (1980).Google Scholar
10. Wittmer, M., J. Appl. Phys. 54, 5081 (1983).Google Scholar
11. Canali, C., Catellani, F., Prudenziati, M., Wadlin, W.H. and Evans, C.A. Jr., Appl. Phys. Lett. 31, 43 (1977).CrossRefGoogle Scholar
12. Magee, T.J., Private Communications.Google Scholar
13. Nicolet, M-A. and Lau, S.S., VLSI Electronics Microstructure Science, Vol 6, Ch. 6, Einspruch, ed. Academic Press, N.Y. (1983).Google Scholar