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Kinetics of Rapid Thermal Oxidation of Silicon

Published online by Cambridge University Press:  28 February 2011

Stephan E. Lassig ,
Thomas J. Debolske  and
John L. Crowley
Stephan E. Lassig
Affiliation:
Peak Systems Inc., 4258 Solar Way, Fremont CA 94538
Thomas J. Debolske
Affiliation:
Peak Systems Inc., 4258 Solar Way, Fremont CA 94538
John L. Crowley
Affiliation:
Peak Systems Inc., 4258 Solar Way, Fremont CA 94538
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Abstract

This paper presents kinetic data for the rapid thermal oxidation (RTO) of <100 silicon using a wall stabilized low pressure arc lamp as the heating source. The data shows a single activation energy of 1.31 eV over the temperature range of 900°C to 1200°C and times of 60 seconds to 240 seconds. Comparisons are made with published kinetic data of RTO using tungsten-halogen lamp source [1] and with furnace oxidation kinetics for short times (<240 sec.) [2]. “Wet” oxidation results using O2:H2 as the oxidizing ambient reveal a lower activation energy and preexponential coefficient than the dry oxidation. Also presented are results using an experimental set-up which exhibits ultraviolet enhanced oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 103
Copyright
Copyright © Materials Research Society 1987

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References

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