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Kink Effect in Short Channel a-Si:H Thin-Film Transistors

Published online by Cambridge University Press:  21 February 2011

G. Fortunato ,
L. Mariucci ,
A. Mattacchini  and
A. Pecora
G. Fortunato
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156, ROMA, ITALY
L. Mariucci
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156, ROMA, ITALY
A. Mattacchini
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156, ROMA, ITALY
A. Pecora
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156, ROMA, ITALY
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Abstract

An avalanche increase of the drain current for high source-drain voltage (commonly called “kink effect”) has been observed for the first time in short-channel amorphous silicon thin-film transistors, fabricated using electron-beam lithography. This effect, caused by generation mechanisms at the drain junction, has been shown to be not only field but also temperature enhanced. The Frenkel-Poole mechanism is proposed in order to explain the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 961
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. LeComber, P.G., J. Non-cryst. Solids, 115, 1 (1989).CrossRefGoogle Scholar
2. Fortunato, G., Gentili, M., Luciani, L., Mariucci, L., Pecora, A. and Petrocco, G., Jap. J. Appl. Phys., 22, L2353 (1990).CrossRefGoogle Scholar
3. Tihani, J. and Schlotterer, H., IEEE Trans, on Electron Devices, ED–22, 1017 (1975).CrossRefGoogle Scholar
4. EIMansi, Y.A. and Caughey, D.M., IEEE Trans, on Electron Devices, ED–24, 1148 (1977).Google Scholar
5. Colinge, J. P., IEEE Electron Devices Lett., 9, 97 (1988).CrossRefGoogle Scholar
6. Lewis, A. G., Wu, I-Wei, Huang, T. Y., Koyanagi, M., Chiang, A. and Bruce, R. H., Proc. IEDM 88, 260 (1988).Google Scholar
7. Hack, M. G., Lewis, A. G. and Shaw, J. G., J. non-cryst. Solids, 137&138, 1229 (1991).CrossRefGoogle Scholar
8. Mariucci, L., Fortunato, G., Foglietti, P., Reita, C. and Sala, D. Della, J. Non-Cryst. Solids, 115, 123 (1989).CrossRefGoogle Scholar
9. Fortunato, G., Mariucci, L., Reita, C. and Foglietti, P., J. Non-Cryst. Solids, 115, 144 (1989).CrossRefGoogle Scholar
10. Moll, J. L., Phvsics of Semiconductors, (McGraw-Hill, New York, 1964), Ch. 11.Google Scholar
11. Sze, S.M., Phvsics of Semiconductor Devices, (J. Wiley and Sons, New York, 1981) p. 402.Google Scholar