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Laser Probes and Numerical Modeling as Process Diagnostics in Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

William G. Breiland ,
Pauline Ho ,
Michael E. Coltrin ,
Robert J. Kee  and
Greg H. Evans
William G. Breiland
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Pauline Ho
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Michael E. Coltrin
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Robert J. Kee
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
Greg H. Evans
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
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Abstract

The chemical vapor deposition process consists of a chemicallyreacting flow in which the fluid mechanics and chemical kinetics are strongly coupled. Laser probes such as Raman spectroscopy and laserinduced fluorescence can be used to measure gas temperature fields and chemical species concentrations, but often the interpretation of such data is difficult because several interacting chemical and physical phenomena are occuring simultaneously. Detailed numerical modeling of the experinmental system under study provides valuable insights into these interactions and allows one to make useful comparisons between experiment and the model to gain a fundamental understanding of the CVD process. Examples of this approach are given for silicon deposition from silane and fluid mechanics diagnostics in a rotating disk CVD reactor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 117: Symposium C – Process Diagnostics: Materials, Combustion, Fusion , 1988 , 23
Copyright
Copyright © Materials Research Society 1988

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