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Laser Recrystallization of InP Films on Oxidized Si Substrate

Published online by Cambridge University Press:  28 February 2011

Li Xiqiang ,
Zhu Weiwen ,
Lin Chenglu ,
Wang Weiyuan  and
Tsou Shihchang
Li Xiqiang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zhu Weiwen
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Lin Chenglu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Wang Weiyuan
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Tsou Shihchang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

The InP films with thickness of 1-2 µm and resistivity of 10-10−3Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 113
Copyright
Copyright © Materials Research Society 1986

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References

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