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Laser-Induced Desorption of in and Ga from Si(100) and Adsorbate Enhanced Surface Damage

Published online by Cambridge University Press:  25 February 2011

Paul G. Strupp ,
April L. Alstrin ,
Brenda J. Korte  and
Stephen R. Leone
Paul G. Strupp
Affiliation:
NRC-NIST postdoctoral fellow
April L. Alstrin
Affiliation:
Joint Institute for Laboratory Astrophysics, National Institute of Standards and Technology and University of Colorado, and Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0440
Brenda J. Korte
Affiliation:
Joint Institute for Laboratory Astrophysics, National Institute of Standards and Technology and University of Colorado, and Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0440
Stephen R. Leone
Affiliation:
Staff member, Quantum Physics Division, National Institute of Standards and Technology
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Abstract

Laser-induced desorption (LID) of In and Ga from Si(100) under ultra-high vacuum conditions is investigated. The frequency doubled 532 nm, 2-6 ns output of a Nd:YAG laser is focussed to 0. 14±0.03 J/cm2 on the Si surface to induce desorption. Desorbed In or Ga atoms are detected by laser-induced fluorescence initiated by a pulsed dye laser propagating in front of the surface. LID occurs by thermal desorption with approximate desorption energies and pre-exponential factors in agreement with literature values from previous isothermal desorption measurements. Experiments at higher coverages suggest that desorption occurs predominantly from the two-dimensional (2D) adsorbate layer with little desorption occurring directly from adsorbate islands. The 2D layer is resupplied by either diffusion out of adsorbate islands or by diffusion of incorporated adsorbate out of the bulk. Adsorbate-enhanced laser-induced surface damage is also observed; only 0.2 monolayer of In reduces the number of laser pulses required to observe damage by greater than a factor of 30.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 27
Copyright
Copyright © Materials Research Society 1992

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